Colloquium 2004

• 題目:
  Impurity Band Mott Insulators:
  a new route to (High Tc) Superconductivity
  
• 講師:
  G. Baskaran氏
  Institute of Mathematical Sciences, India
  東北大学金属材料研究所付属材料科学国際フロンティアセンター
  
• 日時・場所:
  2004年5月27日（木曜日）　16:00から
  物理学専攻 大学院講義室（2-211）にて
  
  
• 要旨：
  　Mott insulators have given us a nice route to reach a correlation driven high Tc superconductivity and novel superconductors as evidenced by cuprate and organic superconductors. Inspired by a recent finding [1] of superconductivity in boron doped dimaond. I suggest that impurity band Mott insulators provide another route for high Tc superconductivity. I will illustrate this idea by going into some details of an electron correlation driven superconductivity mechanism I have suggested for the heavily doped diamond [2]. I argue that the uncompensated boron impurity band is strongly correlated and undergoes a Anderson-Mott insulator to superconductivity transition as the boron density is increased across a critical concentration. [1] E.A. Ekimov et al., Nature (London), {\bf 428} 542 (2004) [2] G. Baskaran, cond-mat/0404286
  
  
• 連絡先:　熊谷健一　(x 3539)

物理コロキウム世話人： 中山隆一 (x 2696) ， 北　孝文 (x 2687)